正性光刻胶曝光区域容易溶解于显影液。特性：分辨率高、台阶覆盖好、对比度好。
光刻胶能形成图形的最小光刻尺寸分传统光刻胶和化学放大光刻胶。
传统光刻胶。用于I线（365nm）、H线（405nm）和G线（436nm），关键尺寸在0.35μm及其以上。
化学放大光刻胶CAR。适用深紫外线（DUV）波长的光刻胶。KrF（248nm）和ArF（193nm）。
目前市場上的正光阻會碰到無法清洗乾淨的問題 ,
和你目前使用的正型光阻比較,
旋寶好化學的PR1光阻有下列優勢
更好的解析能力
更好的線寛控制
有效防止反射引起的痕跡和凹陷
沒有粘著問題,不需使用HMDS , RIE後,容易去除,可做為金屬黏著和犧牲層
旋寶好化學的PR1光阻不容易老化硬化,在lift-off後容易去除,耐溫130°C
PR1經過Silylation
Process後,可耐溫250°C
Applications:
Microfabrication using dry etching, wet etching, plating or
ion implantation processes.
Properties: Superb adhesion without application of adhesion
promoters.
Thickness range: 0.7-15.0 µm
Advantages over other commercial positive resists:
superior photospeed, enhancing exposure throughput
faster development time
application of a single developer for both negative and
positive resists
elimination of use of adhesion promoters
ease of removal in acetone after RIE process
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Positive Resists |
|
Resist
PR1-1000A
PR1-2000A
PR1-4000A |
Thickness
0.7µm - 2.1µm
電漿蝕刻 製程
1.4µm - 4.2µm
2.8µm - 15.0µm
微流道/微機電 製程 |
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Temperature resistance
<
130°C |
氨基磺酸鎳
(Nickel Aminosulfonate)
硼酸(緩衝液)
溴化鎳
Characterization of an Ultra-Thick
Positive Photoresist for Electroplating Applications
Image Reversal Of Positive Potoresists
A generalized CMOS-MEMS platform for micromechanical
resonators monolithically integrated with circuits
M
面氮化銦鎵發光二極體元件製程與分析
Design and Fabrication of an Array
Microejector Driven by a Shear-Mode Piezoelectric Actuator
A silicon-based MEMS vibrating mesh
nebulizer for inhaled drug delivery
A Highly Selective Low Pressure
Inductively Coupled Plasma Etching Process for GaAs Using
Photoresist Mask
CMOS MEMS Fabrication Technologies and
Devices
以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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