System dimensions (not including attached subsystems): 720 mm wide X 650 mm deep X 1530 mm high Height to top of LCD monitor: 1760 mm Weight approximately: 225 kg System Geometry The Xenon Difluoride Etching system is delivered in its standard configuration with two xenon difluoride expansion chambers and the provision for the installation of two xenon difluoride source bottles (not included with the system). Wafer capacity The Xenon Difluoride Etching system is designed to be manually loaded for superior substrate geometry flexibility. This flexibility is a key feature since it allows the easy processing of MEMS devices ranging from die sized devices, very fragile or thin substrates, and standard full wafers. Wafer size limitations The Xenon Difluoride Etching system includes two versions: B model designed to accommodate 6" wafers or smaller parts C model designed to accommodate 8" wafers or smaller parts

Xetch Xenon difluoride Etching system Lab procedure
Deep anisotropic ICP plasma etching designed for high volume MEMS manufacturing

　

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