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BCB 其具有低介電係數、製程容易及可平坦化元件等特點。優點包含 高崩潰電場,可有效的做為金屬與金屬間的隔絕,有助於增加飽和電流以及抑制電性散射的發生低介電係數,降低元件的寄生效應,改善元件高頻響應

BCB is a polymer having a surface energy of about 36 mN/m, a low surface polarity and is also a transparent polymer in visible wavelength.

BCB is a very low polar resin, additionally presenting a very low moisture absorption (
< 0.23%, after 24h in contact with water at 23
°C, according to ASTM D570).
Relative dielectric constant εr of cured films of BCB polymer is about 2.6 to about 2.7 at 1 MHz which makes BCB polymer a low - k material (i.e. material with low relative dielectric constant εr also named "k"), with a low dissipation factor (D = 0.0008 at 1 GHz and 0.002 at 20 GHz). Full cured BCB polymer films are highly resistant to most chemicals which make them difficult to remove. BCB polymer is an insulating hydrophobic layer resistant to most non conductive fluids, like chlorinated aromatic alkanes and alkenes or more general halogenated aromatic alkanes that can be used in liquid formulation for electrowetting applications. Moreover, BCB polymer shows high reliability dielectric properties in time and at high temperature (850
°C) in contact with both the conductive and non conductive fluids.
If need be, the adhesion of BCB polymer on the lower plate, or on the substrate, of the electrowetting device may be controlled by an adhesion promoter between the lower plate (or the substrate) and the BCB polymer layer. The adhesion promoter is, for example, hydrolysed vinyl triacetoxy silane (~ 0.3 weight %) in 1-methoxy-2-propanol (propylene glycol methyl ether).

The use of DVS-BCB polymer allows the formation of a layer having the required dielectric and hydrophobic properties in the same material, for example in a one spin coating step process.

An optical electrowetting device comprising a conductive fluid and a non-conductive fluid, said fluids being non miscible, and an insulating substrate on which both fluids are in contact and form a triple interface,wherein insulating substrate comprises BCB polymer is new and forms another object of

the present invention.
 

CTE 52 ppm/°C
Tg >350°C
Tensile Modulus 2.9 ± 0.2 Gpa
Tensile Strength 87 ± 9 Mpa
Elongation at Break 8 ± 2.5 %
Poisson Ratio 0.34
Residual Stress on Si at 25°C 28 ± 2 MPa

Dielectric Constant

2.65 (1KHz~20GHz)
Dissipation Factor 0.0008 (1KHz~1MHz)
Breakdown Voltage 3 x 106 V/cm
Volume Resistivity 1 x 1019  Ω-cm
Thermal Conductivity at 25°C 0.29 W/m°K


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