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The
improvements made in SiC semiconductor device technology for
electronic and optoelectronic applications are due in part to the
commercial availability of Sic substrates of ever-increasing
diameter and quality. Examples of current state-of-the-art devices
include: high brightness and ultra-bright blue and green InGaN-based
LEDs which take full advantage of the electrical conductivity of
the 6H-SiC substrate by employing a conductive AlGaN buffer layer;
microwave MESFETs on semi-insulating 4H-SiC substrates with power
densities as high as 4.6 W/mm at 3.5 GHz and total CW output power
of 100 W at 2.0 GHz from a single chip; 20 kV and 25 A p-i-n
diodes fabricated on high quality Sic epitaxial layers; 1 cm2
thyristors conducting 300 A at 5.5 V with 1770 V blocking voltage;
and GaN/AlGaN
HEMTs fabricated on semi-insulating 4H-SiC substrates exhibiting
power densities of 11.4 W/mm at 10 GHz. These exciting device
results stem primarily from the exploitation of the unique
electrical and thermophysical properties offered by SiC compared
to Si and GaAs. Among these are: a large band gap for high
temperature operation and radiation resistance, high critical
breakdown field for high power output, high saturated electron
velocity for high frequency operation, and significantly higher
thermal conductivity for thermal management of high power devices.
XBH
supplies high quality SiC epi-ready substrates with both
production and research grades
3" 4H N-Type SiC Epi-ready Substrates
3” 4H Semi-Insulating SiC Epi-ready Substrate
2” 4H N-Type SiC Epi-ready Substrate
2” 6H Semi-Insulating SiC Epi-ready Substrate
2” 6H N-Type SiC Epi-ready Substrate |
Wafer
Diameter : 34.9 ± 0.25
mm
50.8 ± 0.25 mm
Edge
Exclusion :
<5
mm (for 50.8 mm diameter)
Wafer
Thickness : 300 ± 25 µm
Micropipe
Density :
<100 cm-2
Etch Pit
Density
(on Si face) :
<104
cm-2
Dopant : Nitrogen
Net Dopant
Concentration :
1-3 x
1018
cm-3
Conductivity : n-type
Resistivity : 0.04 ohm cm ±
factor of 2
Surface
Finish : Si face
polished
Polytype
Homogeneity :
>95%
Orientation : On-axis:
<0001> ± 0.5°
Off-axis:
<0001>
8° off towards <1100>
or <1120>
Crystal
Structure : Hexagonal
Bandgap : 3.2 eV
Thermal
Conductivity :
4.9 Wcm-1
K-1
Mohs
Hardness : ~9.5 |
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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