DLC E-beam resist has been designed to
maximize the throughput and resolution capabilities of electron
beam lithography. Its attributes of high sensitivity, greater
process tolerance, and easy alignment result in efficient use of
expensive equipment. Because this resist is novolac based and
aqueous alkaline developable, it is non-swelling, and thus
provides greater resolution and critical dimension control.
Electron-beam lithography (EBL) is a lithographic process where a
tightly focused beam of highly accelerated (10-50kV) electrons is
used to define high resolution patterns .Unlike contact printing
photolithography, EBL does not need a physical mask to transfer
patterns into the resist.in electron-beam resist.
EBL is more suitable for defining high resolution (sub-micron)
features as compared to exposing large areas ( >
EBL resolution (typically 10 nm in diameter).
electron-beam exposure, highly energetic electrons provide the
activation energy to break the weak Si-H bonds and promote
formation of the stronger siloxane (Si-O-Si) bonds. Electron-beam
irradiation thus causes resist cross-linking. This reaction
converts the small cage-like structures into a long-range network
structure. The conversion occurs through the opening up of the
cage molecules and subsequent joining with neighboring molecules
to form larger mesh-like structures.
EBL resist crosslinking can also be induced by 157 nm wavelength
light. The energy of a single photon of light at 157 nm wavelength
is evaluated to be 7.9 eV which is very close to the above rough
calculation of the activation energy.
0.02µm - 0.08µm
0.02µm - 0.15µm
0.02µm - 0.74µm
Low-Noise Metamorphic HEMTsWith Reflowed
two-dimensional photonic crystal waveguides for 1.5 um in silicon
by deep anisotropic dry etching
Characterization of near-field holography grating masks for
optoelectronicslfabricated by electron beam lithography
Electron Beam lithography as a versatile nanostructuring technique
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Tel : (02)2217-3442 / Fax : (02)2704-4070