當光阻內的溶劑蒸發後，晶圓被光阻覆蓋。
在自旋塗佈後，晶圓靠近邊緣的兩側會被光阻所覆蓋；在後續的蝕刻或是離子佈值製程中，機械式的晶圓處理機，如機器人手指或是晶圓夾鉗，會撕裂晶圓邊緣的光阻堆積物而造成微粒狀物質的污染，必須採用邊緣球狀物移除(EBR,Edge
Bead Removal)避免光阻在邊緣的堆積。
Edge bead removal should be avoided especially for thicker films.
Edge Bead Removers
Applications: Removal of a resist buildup from top and
bottom edges of coated substrate.
Properties: Liquid solvent.
Impact on productivity:
1
Elimination of contamination source to wafer handling
equipment. 2
Elimination of particle shedding source.
Edge Bead Removers
For Positive Resists For Negative Resists
EBR1 EBR2
Resist Developers
Applications: 1
Development of resist pattern. 2 Removal of
PC3-6000 film after back grinding or dicing processes.
Properties: Aqueous, basic solution.
Impact on productivity:1
Application of single developer for both positive and negative resists.2
Elimination of solvents in removal of PC3-6000 film.
Resist Developers
RD3 RD6 :
Alkaline Metal Containing TMAH
Containing
Resist Removers
Applications: Removal of resist pattern after processing.
Properties: Liquid.
Impact on productivity:
Reduction of time to remove resist.
Resist Removers
RR3 RR4 :
Aqueous, Basic Solution DMSO-based
Solution
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Edge Bead Removers |
|
Applications |
Applicable for removal of resists from top and bottom edges of coated
substrate during coating with negative or positive resists. |
Necessity of Chemical
Edge Bead Removal in
Modern Day Lithographic
Processing
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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